Depending on the application, this is additionally called
"physical etching", "sputtering" or
Process gases are argon or noble gases, but the ions do not
form complimentary radicals. The etching impact is based upon the ejection of
atoms or particles from the substratum with the kinetic power of the sped up
electrons in the electrical field.
Microstructuring of surfaces such as for enhancing bond
Barrage of an evaporation source (" sputtering").
Considering that ion etching does not act chemically, it
works on practically any type of substratum (barely careful). The etching
impact of the plasma takes place practically exclusively in the acceleration
instructions of the ions. The impact is strongly anisotropic.
Chemical plasma etching.
Process gases are utilized whose particles in plasma are
generally divided into radicals. The etching effect is mainly based on the
response of these radicals with atoms or molecules of the substratum,
converting them into aeriform break down items.
Elimination of oxide layers.
Eliminating photoresist (" stripping").
Ashing of matrices for analysis.
Etching of PTFE.
Structuring and also microstructuring of semiconductors.
Plasma is very selective, i.e. the process gases and
substrates need to be quite possibly matched. The etching is isotropic, i.e. it
acts similarly on all sides.
Responsive ion etching.
Molecular gases create radicals as well as positively
charged ions in the plasma. The reactive result of the radicals can be used for
the etching process, in addition to the kinetic power of the ions. When the
plasma excitation is carried out this way, the ions are sped up in the
electrical area and are terminated into the substratum.
Responsive ion etching incorporates the impacts of ion
etching and plasma etching: A particular quantity of anisotropy is produced and
also products which do not chemically react with the radicals could likewise be
engraved by this plasma. Above all, the etching price is significantly raised.
The substrate molecules are excited by the ion barrage and are therefore a lot
Particularly during the etching of semiconductors.
At Deiner digital we also make use of plasma technology to
make plastics bondable, which would certainly or else be thought about as
"non-bondable" as a result of their reduced surface energy. For
polypropylene (PP), polyethylene (PE) or Polyoxymethylene (POM), this is
accomplished by activation in an oxygen plasma. For the plastic material with
the most affordable surface area energy, PTFE, an activation procedure is not
adequate. The fluorine-carbon bonds can not be barged in an oxygen plasma.
In hydrogen plasma, nonetheless, hydrogen radicals combine
with the fluorine atoms of PTFE and so damage the carbon bonds. The hydrogen
fluoride gas is exhausted off, as well as unsaturated carbon bonds remain, to
which polar liquid particles could highly affixed.
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